Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

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• 作者：J. Gao^a ; ^b ; G. He^a ; ^{ganghe01@issp.ac.cn} ; Z.B. Fang^c ; ^{csfzb@usx.edu.cn} ; J.G. Lv^d ; ^{jglv@hftc.edu.cn} ; M. Liu^e ; Z.Q. Sun^a
• 关键词：High-k gate dielectrics ; Interface quality ; Band alignment ; Electrical properties ; Leakage current mechanism
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：25 February 2017
• 年：2017
• 卷：695
• 期：Complete
• 页码：2199-2206
• 全文大小：1973 K
• 卷排序：695

文摘

Sputtering-derived HfGdO gate dielectrics have been deposited on Ge substrates. Nitrogen incorporation can effectively suppress the formation of interfacial layer. Reduction in band gap and valence band offset have been observed after nitrogen incorporation. HfGdO/Ge gate stack with N2 flow rate of 3 sccm displays excellent performance.