Hydrogen incorporation induced the octahedral symmetry variation in VO₂ films

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• 作者：Dooyong Lee^a ; ^c ; Hyegyeong Kim^a ; Ji Woong Kim^a ; Ik Jae Lee^b ; Yooseok Kim^c ; Hyung-Joong Yun^c ; Jouhahn Lee^c ; Sungkyun Park^a ; ^{psk@pusan.ac.kr}
• 关键词：Metal-insulator transition ; VO2 ; Hydrogenation ; Octahedral symmetry
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：28 February 2017
• 年：2017
• 卷：396
• 期：Complete
• 页码：36-40
• 全文大小：930 K
• 卷排序：396

文摘

Metal-insulator-transition disappeared after hydrogenation. Hydrogen incorporated into VO2 occurred at the low temperature (∼100 °C). Hydrogen incorporation causes structural change from monoclinic to rutile. Reduced octahedron symmetry with hydrogen incorporation is related to the vanishing MIT characteristics.