Elucidating the influences of mechanical bending on charge transport at the interfaces of organic light-emitting diodes
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文摘
The change in performance of f-OLEDs after bending was studied in terms of charge carrier behavior. The bending of 8 mm radius induced permanent degradation of f-OLED with the stacking sequence of ITO/PEDOT:PSS/Super Yellow/Cs2CO3/Al. The bending stress changed electronic energy states of materials in OLED. Interfacial charge accumulation by the bending was confirmed by UPS.

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