Nanoscale molybdenum gates fabricated by low damage inductively coupled plasma SF6/C4F8 etching suitable for high performance compound semiconductor transistors
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- 作者：Menglin Caoa ; m.cao.1@research.gla.ac.uk" class="auth_mail" title="E-mail the corresponding author ; Xu Lia ; Mohamed Missousb ; Iain Thaynea
- 关键词：Low damage ; Inductively coupled plasma etch ; 30 ; nm molybdenum gates ; Compound semiconductor transistors
- 刊名：Microelectronic Engineering
- 出版年：2015
- 出版时间：1 June 2015
- 年：2015
- 卷：140
- 期：Complete
- 页码：56-59
- 全文大小：679 K
文摘
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30 nm nanoscale molybdenum gate lines
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Low damage inductively coupled plasma SF6/C4F8 dry etch process
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No observable degradation of the mobility of InGaAs channel
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Suitable for short gate length, high performance III–V devices