Aging comparative analysis of high-performance FinFET and CMOS flip-flops

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• 作者：Shiva Taghipour ; ^{taghipoor_shiva@yahoo.com} ; Rahebeh Niaraki Asli ^{niaraki@guilan.ac.ir}
• 关键词：Aging effect ; Bias Temperature Instability (BTI) ; FinFET ; Flip-flop ; Hot Carrier Injection (HCI)
• 刊名：Microelectronics Reliability
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：69
• 期：Complete
• 页码：52-59
• 全文大小：950 K
• 卷排序：69

文摘

The effect of N/PBTI and HCI aging on MOSFET and FinFET based FFs is analyzed. The updated Vth is estimated by long-term aging models to apply N/PBTI and HCI. A comparative analysis demonstrates the behavior of different CMOS and FinFET FFs. Performance parameters such as Speed, power and PDP of each FF cell are calculated. The paper shows the superiority of FinFET FFs over CMOS FFs against aging mechanisms.