Single electron tunneling through Ge nanocrystal fabricated by cosputtering method
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文摘
Electrical transport properties of thin SiO2 films containing Ge nanocrystals have been studied. Steplike structures were observed on current–voltage characteristics. The structures changed depending on the size of nanocrystals. The observed step structures could be explained by a model considering the interplay between the resonant tunneling of electrons through the discrete electronic states of Ge nanocrystals and the single electron charging effect of Ge nanocrystals.