Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part II: Measurements and results

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• 作者：D. Boudier^a ; ^{dimitri.boudier@ensicaen.fr} ; B. Cretu^b ; E. Simoen^c ; R. Carin^a ; A. Veloso^c ; N. Collaert^c ; A. Thean^c
• 关键词：Triple-gate ; FinFET ; Low frequency noise ; 1/f noise ; Generation recombination ; Traps
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：128
• 期：Complete
• 页码：109-114
• 全文大小：2214 K
• 卷排序：128

文摘

Low frequency noise measurements are used as a non-destructive diagnostic tool in order to evaluate the quality of the gate oxide and the silicon film of sub-10 nm triple-gate Silicon-on-Insulator (SOI) FinFETs. It was found that the carrier number fluctuations explain the 1/f noise in moderate inversion for n- and p-FinFETs, which allows estimating the gate oxide trap densities. The noise spectroscopy with respect to temperature (study of the generation-recombination noise) led to the identification of the traps located in the transistors silicon film.