Second harmonic generation for contactless non-destructive characterization of silicon on insulator wafers

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• 作者：D. Damianos^a ; ^{dimitrios.damianos@minatec.grenoble-inp.fr" class="auth_mail" title="E-mail the corresponding author} ; L. Pirro^a ; G. Soylu^a ; I. Ionica^a ; V. Nguyen^a ; G. Vitrant^a ; A. Kaminski^a ; D. Blanc-Pelissier^b ; L. Onestas^a ; J. Changala^c ; M. Kryger^c ; S. Cristoloveanu^a
• 关键词：Second Harmonic Generation ; Non-destructive characterization ; SOI substrates ; Ultra-thin SOI ; Back-gate
• 刊名：Solid State Electronics
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：115
• 期：part_PB
• 页码：237-243
• 全文大小：2053 K

文摘

In this work we investigate a non-invasive, non-destructive characterization technique for monitoring the quality of film, oxide and interfaces in silicon-on-insulator (SOI) wafers. This technique is based on optical Second Harmonic Generation (SHG). The principles of SHG and the experimental setup will be thoroughly described. The experimental parameters best suited for testing SOI wafers with SHG are identified. SOI geometry, as well as the passivation of the top surface, both have an impact on the observed SHG signal. The back-gate bias applied on the substrate is shown to modulate the SHG signal.