Hardening silicon-on-insulator nMOSFETs by multiple-step Si+ implantation
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- 作者：Huixiang Huanga ; hxhuang@jmu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; YanYang Huanga ; Jiachun Zhenga ; Sufen Weia ; Kai Tanga ; Dawei Bib ; Zhengxuan Zhangb
- 关键词：Total dose radiation ; Silicon-on-insulator ; Ion implantation ; X-ray Diffraction ; Radiation hardening by process
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：February 2016
- 年：2016
- 卷：57
- 期：Complete
- 页码：1-9
- 全文大小：1782 K
文摘
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Multiple-step Si implantation is used to harden buried oxides in SOI wafers.
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Single implant dose is determined by XRD technique.
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Pseudo-MOS characterization is applied to examine film quality.
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Hardened partially-depleted SOI devices show tolerance up to 1.0 Mrad(Si).