5 μm-thick TEOS silicon dioxide films were developed for MEMS devices.

Two-way analysis of variance (ANOVA) verifies that the experimental data are valid.

The calculated P-values have good agreement with the experimental datasets.

With increasing the ratio of LF/HF power, the residual stress changes from tensile stress to compressive stress.

The etch rate decreases with increasing the ratio of LF/HF power.

The difference in the wafers’ CTE is deemed responsible for the difference in the residual stresses of the films co-deposited on Si and SS316.

The capacitance of metal-insulator-metal capacitor was studies up to 300 °C.

The MIM capacitor exhibits a negative TCC of −6–−10 PPM/°C from room temperature to 300 °C.