Quantitative temperature profiling across nanoheater on silicon-on-insulator wafer using null-point scanning thermal microscopy
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- 作者：Gwangseok Hwang ; Ohmyoung Kwon ; omkwon@korea.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Silicon-on-insulator transistor ; Scanning thermal microscopy ; Null-point scanning thermal microscopy ; Nanoscale temperature measurement ; Hotspot
- 刊名：International Journal of Thermal Sciences
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：108
- 期：Complete
- 页码：81-88
- 全文大小：1110 K
文摘
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We concurrently profile temperature and thermal conductivity across nanoheaters on SOI.
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Optimal measurement conditions to maximize SNR of NP SThM are found systematically.
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Experimental temperature profiles are compared with diffusion modeling results.
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Effects of silicon thickness and heating power on the temperature profile are studied.
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The utility of NP SThM for nanoscale energy transport/conversion analysis is shown.