Theoretical investigation on the interfacial properties of carbon deposited on β-SiC(111) substrate
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- 作者：Yan-Qing Yanga ; yqyang@nwpu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Jian Lia ; b ; lijian@xsyu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Xian Luoa
- 关键词：Density functional theory calculations ; Interfacial properties ; Carbon deposition ; Silicon carbide
- 刊名：Diamond & Related Materials
- 出版年：2016
- 出版时间：February 2016
- 年：2016
- 卷：62
- 期：Complete
- 页码：22-29
- 全文大小：1788 K
文摘
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Diamond-like stacking is identified for the interfacial carbon deposited on SiC(111).
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Regardless of deposition rate and substrate area, the stacking style always exists.
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After some layers deposited, the stacking will disappear caused by the perturbations.
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Stronger interfacial bonding exists on C-terminated SiC(111) than Si-terminated one.