文摘
We present the design, fabrication and characterization of a highly efficient silicon waveguide crossing based on multimode interference (MMI). The crossing is formed by only one step etching with the grating couplers on a silicon-on-insulator (SOI) platform. High transmission efficiency of 98.5% (loss of 鈭?.07 dB) and low crosstalk (<鈭?3 dB) are predicted by the 3D FDTD simulation. Our experiment results showed good agreement with the simulation and, loss of 鈭?.1 dB per crossing, and crosstalk better than 鈭?0 dB was obtained over a broad optical spectrum from 1520 nm to 1580 nm. Such a low loss, low crosstalk waveguide crossing is suitable for future on-chip optical interconnect.