Raman characterization of AB- and ABC-stacked few-layer graphene by interlayer shear modes

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• 作者：Xin Zhang^a ; ^{zhangxin@semi.ac.cn" class="auth_mail" title="E-mail the corresponding author} ; Weng-Peng Han^a ; Xiao-Fen Qiao^a ; Qing-Hai Tan^a ; Yu-Fang Wang^b ; Jun Zhang^a ; Ping-Heng Tan^a
• 刊名：Carbon
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：99
• 期：Complete
• 页码：118-122
• 全文大小：1017 K

文摘

Stacking order of layered materials strongly influences their electronic properties. Bernal (AB) and rhombohedral (ABC) stacking are much common in few-layer graphenes. Here, we found that AB- and ABC-stacked few-layer graphenes can be well distinguished by whether their highest-frequency shear modes are observed or not in the Raman spectra at room temperature. This method can be expanded to Raman characterization of the stacking order in other two-dimensional layered materials.