Carrier-mediated antiferromagnetic interlayer exchange coupling in Ga co-doped (Zn, Ni)O-based multilayers

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• 作者：M. Luo^a ; ^{mluo@gench.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Y.H. Shen^b
• 关键词：Interlayer exchange coupling ; (Zn ; Ni)O multilayers ; RKKY interaction ; Antiferromagnetic
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：127
• 期：22
• 页码：10705-10709
• 全文大小：1070 K

文摘

Interlayer exchange coupling in (Zn, Ni)O multilayers is investigated by density functional theory calculations. We mainly study the effect of the nonmagnetic spacer and carrier in controlling the IEC between the magnetic layers separated by ZnO layers. It is found that, for the pure ZnO layers, the coupling between the two magnetic (Zn,Ni)O layers is always ferromagnetic, which is well interpreted by a gaped two-band model of RKKY interaction. However, the antiferromagnetic coupling is observed by Ga doping, which is in connection with the ZnO layers’s thickness and the Ga atoms’s sites. The p–d hybridization mechanism plays an important role in switching FM coupling to AFM coupling.