Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing

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• 作者：Qiao Zhongliang^a ; ^c ; Tang Xiaohong^a ; ^{exhtang@ntu.edu.sg} ; Lee Eng Kian Kenneth^b ; Lim Peng Huei^a ; Bo BaoXue^c
• 关键词：Energy band gap tuning ; Quantum well (QW) ; Intermixing
• 刊名：Solid-State Electronics
• 出版年：2013
• 出版时间：January, 2013
• 年：2013
• 卷：79
• 期：Complete
• 页码：281-284
• 全文大小：303 K

文摘

Quantum well (QW) inter-mixing based post-growth energy band gap turning of 980 nm InGaAs/InGaAsP QW-structures for high power semi-conductor lasers has been investigated. The QW intermixing was carried out by depositing SiO₂ thin film on the samples and followed by high temperature annealing. The band gap energy blue shift of the QWs after the intermixing under various conditions has been studied. The largest band gap energy blue shift of the QWs reaches exceeds 220 nm.