V-shaped pits in HVPE-grown GaN associated with columnar inversion domains originating from foreign particles of α-Si₃N₄ and graphitic carbon

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• 作者：Tohoru Matsubara^a ; ^b ; ^{t.matsubara@ube-ind.co.jp} ; Yusho Denpo^a ; Narihito Okada^a ; Kazuyuki Tadatomo^a
• 关键词：GaN ; V-shaped pits ; Inversion domain ; Foreign particle ; TEM ; STEM
• 刊名：Micron
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：94
• 期：Complete
• 页码：9-14
• 全文大小：1688 K
• 卷排序：94

文摘

Columnar inversion domains extend from near sapphire substrate to bottom of V-pits. The inversion domains originate from foreign particles. These particles were found to be of α-Si3N4 and graphitic carbon. Inversion domain boundary is known as a IDB* type-structure.