10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcells
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- 作者：M. Ochoaa ; mario.ochoa@ies-def.upm.es" class="auth_mail" title="E-mail the corresponding author ; E. Yaccuzzib ; c ; P. Espinet-Gonzá ; leza ; M. Barrerab ; c ; E. Barrigó ; na ; M.L. Ibarrab ; d ; Yedileth Contrerasa ; J. Garcí ; ab ; c ; E. Ló ; peza ; M. Alurraldeb ; C. Algoraa ; E. Godfrinb ; I. Rey-Stollea ; J. Plá ; b ; c
- 关键词：Multijunction solar cell ; Irradiation ; Protons ; TCAD ; Defects
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：159
- 期：Complete
- 页码：576-582
- 全文大小：1079 K
文摘
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Pmax reduces 4% from BOL to EOL in GaInP/Ge and Ge and 10% for GaAs solar cells.
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The 3J GaInP/GaAs/Ge cell exhibited a 12% power loss between BOL and EOL.
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TCAD modeling is used to explain the losses in GaAs solar cells (most damaged cell).
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The results from 1J solar cells correlate well with those of 3J solar cells.