Quality and stability of compound indium sulphide as source material for buffer layers in Cu(In,Ga)Se₂ solar cells

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• 作者：Paul Pistor ; Raquel Caballero ; Dimitrios Hariskos ; Victor Izquierdo-Roca ; Rolf Wä ; chter ; Susan Schorr ; Reiner Klenk
• 关键词： ; none ; color ; black"" href=""/science?_ob=MathURL&_method=retrieve&_udi=B6V51-4TVJ02T-3&_mathId=mml17&_user=10&_cdi=5773&_pii=S0927024808002948&_rdoc=30&_issn=09270248&_acct=C000050221&_version=1&_userid=10&md5=34
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2009
• 出版时间：January 2009
• 年：2009
• 卷：93
• 期：1
• 页码：148-152
• 全文大小：1274 K

文摘

Indium sulphide layers were deposited by thermal evaporation from compound In₂S₃ powder provided by different suppliers. The source material quality was systematically analysed in terms of contamination, stoichiometry, grain size, evaporation behaviour and crystallinity. It was found to vary significantly for different suppliers. The influence of source material quality and stability on In₂S₃ layer growth and properties were investigated by various optical, crystallographic and surface analysis methods. The findings were correlated with the performance of solar cells prepared with an In₂S₃ buffer layer. This includes the analysis of jV-curves and quantum efficiencies of solar cells prepared with different Cu(In,Ga)Se₂ absorbers. After a post annealing step in air, best cells reached a certified efficiency of 15.2 % with remarkably high fill factor (75.6 % ) and open circuit voltage (677 mV).