Overcoming the 鈥渞etention vs. voltage鈥?trade-off in nonvolatile organic memory: Ag nanoparticles covered with dipolar self-assembled monolayers as robust charge storage nodes
Organic non-volatile memory devices with significantly enhanced retention are explored with C60 thin-film transistors containing silver nanoparticles (Ag-NPs) within gate dielectrics as charge storage nodes. Dipolar self-assembled monolayers covering Ag-NPs effectively prevent stored charges from being lost by providing an additional energy threshold for back-tunneling process. This enables long retention even with ultrathin tunneling dielectric layers, providing a simple means to realize long retention without causing an excessive increase in operation voltage.