Plasma-enhanced flexible metal–insulator–metal capacitor using high-k ZrO₂ film as gate dielectric with improved reliability

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• 作者：Min-Ching Chu ; Jagan Singh Meena ; Chih-Chia Cheng ; Hsin-Chiang You ; Feng-Chih Chang ; Fu-Hsiang Ko
• 刊名：Microelectronics Reliability
• 出版年：2010
• 出版时间：August 2010
• 年：2010
• 卷：50
• 期：8
• 页码：1098-1102
• 全文大小：746 K

文摘

We demonstrate a new flexible metal–insulator–metal capacitor using 9.5-nm-thick ZrO₂ film on a plastic polyimide substrate based on a simple and low-cost sol–gel precursor spin-coating process. The surface morphology of the ZrO₂ film was investigated using scan electron microscope and atomic force microscope. The as-deposited ZrO₂ film under suitable treatment of oxygen (O₂) plasma and then subsequent annealing at 250 °C exhibits superior low leakage current density of 9.0 × 10⁻⁹ A/cm² at applied voltage of 5 V and maximum capacitance density of 13.3 fF/μm² at 1 MHz. The as-deposited sol–gel film was completely oxidized when we employed O₂ plasma at relatively low temperature and power (30 W), hence enhancing the electrical performance of the capacitor. The shift (Zr 3d from 184.1 eV to 184.64 eV) in X-ray photoelectron spectroscopy of the binding energy of the electrons towards higher binding energy; clearly indicates that the O₂ plasma reaction was most effective process for the complete oxidation of the sol–gel precursor at relatively low processing temperature.