Effect of Sb doping on the opto-electronic properties of SnO₂ nanowires

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• 作者：Yoon Chul Kim ; Chang Hoon Yoon ; Jaehyun Park ; Jangyeol Yoon ; Noh Soo Han ; Jae Kyu Song ; Seung Min Park ; Jeong Sook Ha
• 关键词：Tin oxide nanowires ; Antimony doping ; Photoluminescence ; Field effect mobility ; Defect state ; UV sensing
• 刊名：Thin Solid Films
• 出版年：2012
• 出版时间：31 August, 2012
• 年：2012
• 卷：520
• 期：21
• 页码：6471-6475
• 全文大小：545 K

文摘

Antimony (Sb) doping of SnO₂ nanowires (NWs) was investigated for its optical and electrical effects. The low-temperature photoluminescence spectra of SnO₂ NWs varied significantly with increasing Sb content, where the temperature-dependence of the visible emission at ca. 400 nm was distinctive with Sb-doping, indicating different defect states, such as neutral and positively charged oxygen vacancies. Field effect transistors (FETs) with low-level Sb-doped SnO₂ NW channels exhibited higher mobility, charge concentration, and faster response and recovery to UV light than intrinsic SnO₂ NW FETs.