Improvement mechanism of resistance random access memory with supercritical CO₂ fluid treatment

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• 作者：Kuan-Chang Chang ; Jung-Hui Chen ; Tsung-Ming Tsai ; Ting-Chang Chang ; Syuan-Yong Huang ; Rui Zhang ; Kai-Huang Chen ; Yong-En Syu ; Geng-Wei Chang ; Tian-Jian Chu ; Guan-Ru Liu ; Yu-Ting Su ; Min-Chen Chen ; Jhih-Hong Pan ; Kuo-Hsiao Liao ; Ya-Hsiang Tai ; Tai-Fa Young ; Simon M. Sze ; Chi-Fong Ai ; Min-Chuan Wang ; Jen-Wei Huang ; et al.
• 关键词：Supercritical fluid ; RRAM ; Hydration&ndash ; dehydration reaction ; Tin doping
• 刊名：The Journal of Supercritical Fluids
• 出版年：January, 2014
• 年：2014
• 卷：85
• 期：Complete
• 页码：183-189
• 全文大小：2802 K

文摘

We demonstrated that the supercritical CO₂ fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiO_x) thin film were passivated by the hydration-dehydration reaction through supercritical CO₂ fluid treatment, which was verified by the XPS and FTIR analyses. The current conduction mechanism of low resistance state in post-treated Sn:SiO_x thin film was transferred to hopping conduction from Ohmic conduction. Furthermore, the current conduction mechanism of high resistance state in the memory device was transferred to Schottky emission from Frenkel-Poole conduction. The phenomena were attributed to the discontinuous metal filament formed by hydration-dehydration reaction in Sn:SiO_x thin film through supercritical fluid treatment. Finally, a reaction model was proposed to explain the mechanism of current reduction in Sn:SiO_x thin film with supercritical CO₂ fluid treatment.