Investigation of substrate temperature for Sc13Al87N piezoelectric film deposited on silicon substrate
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- 作者：Jialin Tanga ; b ; Chengtao Yanga ; b ; ctyang@uestc.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Peng Weia ; b ; Dongwei Niua ; b ; Zhiwei Taia ; b ; Xianwei Hua ; b
- 关键词：ScAlN ; Thin films ; X-ray techniques ; Magnetron sputtering ; Crystal structure ; Piezoelectric constant
- 刊名：Materials Letters
- 出版年：2016
- 出版时间：15 November 2016
- 年：2016
- 卷：183
- 期：Complete
- 页码：429-431
- 全文大小：488 K
文摘
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Varying sputtering atmosphere about substrate temperature.
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13% Sc doped AlN has been investigated.
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(002) c-axis ScAlN films were prepared.
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A comparison of piezoelectric constant d33 about non-doped AlN with 13% Sc doped AlN thin films.