Initial thermal stress and strain effects on thermal mechanical stability of through silicon via
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- 作者：Yunna Suna ; Shi Suna ; Yazhou Zhanga ; Jiangbo Luoa ; Yan Wanga ; wyyw@sjtu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Guifu Dinga ; gfding@sjtu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Yufeng Jinb
- 关键词：IC packaging and fabricating ; Thermal load ; Initial thermal stress and deformation ; Thermal mechanical reliability
- 刊名：Microelectronic Engineering
- 出版年：2016
- 出版时间：1 November 2016
- 年：2016
- 卷：165
- 期：Complete
- 页码：11-19
- 全文大小：2261 K
文摘
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Thermal stress and strain induced by IC packing and fabricating process was considered.
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Deformation brought by packaging and fabricating process affected the future deformation of TSV.
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Fatigue life is prolonged at edges and shortened at middle part of TSV by packing and fabricating process.
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Rational design for packaging and fabricating process can improve IC thermal mechanical reliability.