Uniform ZnO nanowire arrays were obtained deposited with the ZnO seed layers by a low-temperature hydrothermal process.
A possible growth mechanism of ZnO nanowire arrays was proposed.
The aluminum impurities existed in the ZnO nanowire arrays modify ZnO lattice and reduce the internal defects of crystal.
The Al doping shows a lower turn-on voltage, a higher field emission factor and better current stabilities.