Impact of germanium co-doping on oxygen precipitation in heavily boron-doped Czochralski silicon

详细信息    查看全文

• 作者：Jian Zhao ; Peng Dong ; Jianjiang Zhao ; Xiangyang Ma ; ^{mxyoung@zju.edu.cn} ; Deren Yang ; ^{mseyang@zju.edu.cn}
• 关键词：Germanium ; Co-doping ; Boron doped ; Oxygen precipitation ; RTP
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：99
• 期：Complete
• 页码：35-40
• 全文大小：903 K
• 卷排序：99

文摘

Ge-doping suppresses oxygen precipitation in heavily B-doped silicon without RTP. Ge-doping enhances oxygen precipitation in heavily B-doped silicon with prior RTP. The morphology of oxygen precipitates are significantly affected by Ge co-doping. The effect of Ge is supposed to be related to strain relief and point defects.