Influence of channel layer thickness on the stability of amorphous indium zinc oxide thin film transistors
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- 作者：Zhao Yang ; Jianwen Yang ; Ting Meng ; Mingyue Qu ; Qun Zhang ; zhangqun@fudan.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Indium-zinc-oxide (IZO) ; Sputtering ; Semiconductor ; Bias/aging stability ; Thin-film transistors (TFTs)
- 刊名：Materials Letters
- 出版年：2016
- 出版时间：1 March 2016
- 年：2016
- 卷：166
- 期：Complete
- 页码：46-50
- 全文大小：1733 K
文摘
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a-IZO-TFTs with different channel layer thickness were fabricated.
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The initial characteristics and aging effect on the thickness were investigated.
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The PBS and NBS stabilities of initial and aged a-IZO-TFTs were compared.
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Thin channel layer a-IZO-TFTs exhibit good anti-aging effect and bias stability.