Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111)

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• 作者：Lichun Zhang^a ; ^b ; ^{zhanglch@semi.ac.cn" class="auth_mail" title="E-mail the corresponding author} ; Xuewen Geng^a ; Guowei Zha^a ; ^b ; Jianxing Xu^a ; ^b ; Sihang Wei^a ; ^b ; Ben Ma^a ; ^b ; Zesheng Chen^a ; ^b ; Xiangjun Shang^a ; ^b ; Haiqiao Ni^a ; ^b ; Zhichuan Niu^a ; ^b ; ^{zcniu@semi.ac.cn" class="auth_mail" title="E-mail the corresponding author}
• 关键词：GaAs nanowires ; Photodetector ; Molecular beam epitaxy ; Peak responsivity
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：52
• 期：Complete
• 页码：68-74
• 全文大小：2430 K

文摘

Self-assembled GaAs nanowires were grown by molecular beam epitaxy (MBE) on un-pretreated Si(111) substrates under different As₄/Ga flux ratios (V/III ratios). It has been found that the fraction of vertical wires would be nearly 100% when the As₄/Ga ratio arrives 90. The transmission electron microscopy (TEM) and micro-photoluminescence (PL) spectra results have indicated that the GaAs nanowires grown under a larger V/III ratio (90) have a pure ZB structure. Field-effect transistors (FET) based on single nanowire were fabricated with GaAs nanowires grown under the larger V/III ratio (90). The characteristics of the FET reveal a hole concentration of 3.919×10¹⁷ cm⁻³ and a hole mobility of 0.417 cm² V⁻¹s⁻¹. Photodetectors based on single nanowire and multiple nanowires structure with a metal-semiconductor-metal (MSM) electrode configuration have been proposed and demonstrated. All the photodetectors operating at room temperature exhibit good photoconductive performance, excellent stability, reproducibility and superior peak responsivity (87.67 A/W under 5 V for single nanowire photodetector).