Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature

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• 作者：Song Zhang^a ; Qingfang Xu^a ; Zhiying Hu^a ; Peipei Zhu^a ; Rong Tu^a ; ^{turong@whut.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; ^{superkobe0104@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Lianmeng Zhang^a ; ^b ; Mingxu Han^b ; Takashi Goto^b ; Jiasheng Yan^c ; Sijun Luo^d
• 关键词：β-SiC ; Epitaxial growth ; Laser CVD ; Deposition rates
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：15 February 2016
• 年：2016
• 卷：42
• 期：3
• 页码：4632-4635
• 全文大小：1252 K

文摘

<111>-β-SiC epilayers were prepared on <0001>-α(4H)-SiC by laser chemical vapor deposition at temperatures of 1390–1505 K. Non-explosive and non-corrosive precursor (Hexamethyldisilane, HMDS, Si(CH₃)₃–Si(CH₃)₃) was used in non-H₂ (Ar) atmosphere. The β-SiC films grew epitaxially with in-plane orientation relationship of β-SiC [$\overline{2}02$]//α(4H)-SiC [1000] and β-SiC [$02\overline{2}$]//α(4H)-SiC [0100]. The deposition rates of the β-SiC films were 31–261 μm h⁻¹, which were significantly higher than those of conventional CVDs.