Optimization on the luminous efficiency in AlGaN-based ultraviolet light-emitting diodes by amendment of a superlattice hole reservoir layer

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• 作者：Xian Yang ; Huiqing Sun ; ^{sunhq@scnu.edu.cn} ; Xuancong Fan ; Zhuding Zhang ; Jie Sun ; Xinyan Yi ; Zhiyou Guo
• 关键词：UVLED ; AlGaN ; Hole reservoir layer ; APSYS
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：293-298
• 全文大小：1533 K
• 卷排序：101

文摘

The position of the improved structure is between electron blocking layer and p-AlGaN layer. Three different structures are compared in detail. The sample with the improved hole reservoir layer shows preponderance obviously.