文摘
As we know, there has rarely been research about the gas sensing properties of Zr-doped In2O3. In this work, we synthesized and characterized Zr-doped In2O3 with a hard template method and investigated the gas sensing properties of the sensor based on Zr-doped In2O3. Zr-doping makes the operating resistance rather low (23 kΩ). Besides, the operating temperature is very low (75 °C), too. It means this material has the potential in the field of portable device due to its low energy cost. The detection limit is down to 20 ppb of NO2.