Power-dependent lateral photovoltaic effect in a-Si:H/c-Si p-i-n structure at different temperatures
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- 作者：Yanan Liu ; Jihong Liu ; Zicai Zhang ; Guoying Yan ; Shuang Qiao ; sqiao@hbu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Shufang Wang ; sfwang@hbu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Guangsheng Fu
- 关键词：Amorphous silicon ; Schottky barrier ; Optical materials and properties ; Photovoltaic effect ; Optical detectors
- 刊名：Materials Letters
- 出版年：2016
- 出版时间：1 August 2016
- 年：2016
- 卷：176
- 期：Complete
- 页码：257-260
- 全文大小：953 K
文摘
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Position sensitivity tends to saturate with increasing laser power.
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Position sensitivity shows a nonlinear decreasing behavior with temperature.
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These results were ascribed to reduction of SB height and ITO layer resistivity.