Growth of Cd1-xZnxTe thin films with high Zn content by close-spaced sublimation
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- 作者：Yanglin Wu ; Haitao Xu ; Huanhuan Ji ; Jian Huang ; Jijun Zhang ; Zebo Fang ; Ke Tang ; Xiaoyan Liang ; Run Xu ; runxu@staff.shu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Linjun Wang ; ljwang@shu.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Cd1-xZnxTe ; Thin films ; Zn content ; Close-spaced sublimation
- 刊名：Vacuum
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：132
- 期：Complete
- 页码：106-110
- 全文大小：1060 K
文摘
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The CdZnTe films with Zn content as high as 0.42 are achieved.
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A high sticking coefficient ratio of Zn to Cd is one of two key factors to obtain CdZnTe films with a high Zn content.
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A high Zn vapor pressure under low growth pressure is another key factor to obtain CdZnTe films with a high Zn content.