Structure and optoelectronic properties of Mg-doped CuFeO2 thin films prepared by sol-gel method
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文摘
CuFe1?xMgxO2 (0 ? x ? 0.05) thin films were synthesized by a simple sol-gel method. The structural and optoelectronic properties of the films were studied. Single phase CuFeO2 thin films with c-axis orientation were obtained on sapphire substrates and secondary phase was not detected by XRD measurements in the studied doping range. The resistivity of the films first decreased and then increased with increasing x. The minimum resistivity was observed as 3.23 ¦¸ cm at room temperature for the doping amount of x = 0.02. The transmittance of all the films was around 37 % in the wavelength of 600 nm and three absorb edges were observed in the wavelength range of 200-1100 nm. The optical direct bandgaps of CuFeO2 were estimated to be ¡«3.38 eV, 2.04 eV and 1 eV, respectively.

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