Silicon germanium active layer with graded band gap and µc-Si:H buffer layer for high efficiency thin film solar cells

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• 作者：Duy Phong Pham^a ; Sangho Kim^b ; Jinjoo Park^a ; AnhHuy Tuan Le^a ; Jaehyun Cho^b ; Junhee Jung^b ; S.M. Iftiquar^a ; ^{iftiquar@skku.edu" class="auth_mail" title="E-mail the corresponding author} ; Junsin Yi^a ; ^b ; ^{yi@yurim.skku.ac.kr" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Thin film silicon germanium solar cells ; Band-gap profiling ; µ ; c-Si ; H buffer layers
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：56
• 期：Complete
• 页码：183-188
• 全文大小：1116 K

文摘

We investigated solar cells with graded band gap hydrogenated amorphous silicon germanium active layer and hydrogenated microcrystalline silicon buffer layer at the interface of intrinsic and n-type doped layer. A significantly improved, 10.4% device efficiency was observed in this type of single junction solar cell. The intrinsic type microcrystalline silicon buffer layer is thought to play dual roles in the device; as a crystalline seed-layer for growth of n-type hydrogenated microcrystalline silicon layer and helping efficient electron collection across the i/n interface. Based on these, an enhancement in cell parameters such as the open-circuit voltage (V_oc), and fill factor (FF) was observed, where the FF and V_oc reaches up to 69% and 0.85 V respectively. Our investigation shows a simple way to improve device performance with narrow-gap silicon germanium active layer in solar cells in comparison to the conventionally constant band gap device structure.