Dependence of electrostatic potential distribution of Al2O3/Ge structure on Al2O3 thickness
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- 作者：Xiaolei Wanga ; Jinjuan Xianga ; Wenwu Wanga ; wangwenwu@ime.ac.cn" class="auth_mail" title="E-mail the corresponding author ; Chao Zhaoa ; Jing Zhangb ; zhangj@ncut.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Band alignment ; Electrostatic potential distribution ; X-ray photoelectron spectroscopy ; Germanium ; High-k dielectric ; Charge neutrality level
- 刊名：Surface Science
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：651
- 期：Complete
- 页码：94-99
- 全文大小：714 K
文摘
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The electrostatic potential distribution of Al2O3/Ge structure is found to be Al2O3 thickness dependent.
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This interesting phenomenon is attributed to the appearance of gap states on Al2O3 surface.
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Our work confirm the feasibility of gap state model in understanding the band lineup at oxide/semiconductor structure.