Effect of thermal annealing on resistance switching characteristics of Pt/ZrO₂/TiN stacks

详细信息    查看全文

• 作者：Jonggi Kim ; Kyumin Lee ; Yonjae Kim ; Heedo Na ; Dae-Hong Ko ; Hyunchul Sohn ; Sunghoon Lee
• 关键词：Insulators ; Interfaces ; Electron microscopy ; Diffusion ; Defects
• 刊名：Materials Chemistry and Physics
• 出版年：2013
• 出版时间：15 November, 2013
• 年：2013
• 卷：142
• 期：2-3
• 页码：608-613
• 全文大小：2507 K

文摘

In this study, the effect of thermal annealing on both the physical properties and the resistive switching properties of ZrO₂ films deposited by atomic layer deposition (ALD) method were investigated for its potential application to non-volatile memory devices. The ZrO₂ films in the Pt/ZrO₂/TiN structure exhibited unipolar and bipolar resistance switching behaviors depending on the nature of the bias applied to Pt top electrodes for the electro-forming process. For unipolar switching, the resistance of the high resistance state (HRS) was reduced with increasing annealing temperature, accompanied with the increase of metallic Zr in the annealed ZrO₂ films. In contrast, the HRS resistance in the bipolar switching was increased while the low resistance state (LRS) resistance was decreased with increasing annealing temperature, producing a greater change in resistance. SIMS and EDX showed that the thickness of interfacial TiO_xN_y layer between the ZrO₂ and the TiN bottom electrode was enlarged with annealing. The enlarged TiO_xN_y layer was expected to produce the reduction of LRS resistance with the increase of HRS resistance in the bipolar resistance switching.