The recently commercialized rf-PGD-TOFMS has been investigated for state of the art silicon-based TFSCs characterization. Two configurations used in production of tandem-junctions solar cells were compared. Depth distribution of dopant elements was investigated using milli- and microsecond PGD regimes. The “low mass mode” available in the rf-PGD-TOFMS instrument was tested for dopants analysis. Cell power conversion efficiency was measured and related to depth profiles.