Improved performance of inverted quantum dots light emitting devices by introducing double hole transport layers
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- 作者：Congbiao Jiang ; Huiming Liu ; Baiquan Liu ; Zhiming Zhong ; Jianhua Zou ; zou1007@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Jian Wang ; Lei Wang ; mslwang@scut.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Junbiao Peng ; Yong Cao
- 关键词：Quantum dot light emitting diodes ; Inverted structure ; Double hole transport layer ; Efficiency
- 刊名：Organic Electronics
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：31
- 期：Complete
- 页码：82-89
- 全文大小：2393 K
文摘
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A low turn-on voltage and highly efficient deep red QD-LEDs has been successfully fabricated.
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Through thermal treatment, the Von decreases from 4.8 V to 3.6 V and Lmax increases by 60% for single HTL QD-LEDs.
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The QD-LEDs with double HTLs exhibits low Von of 1.9 V, high CE and PE of 8.68 cd/A and 10.2 lm/W respectively.