High performance Ge ultra-shallow junctions fabricated by a novel formation technique featuring spin-on dopant and laser annealing for sub-10 nm technology applications
A novel technique for the formation of ultra-shallow Ge junctions using the spin-on dopant and laser annealing is proposed. The ultra-shallow junction depth, high surface doping concentration and steep doping profiles are achieved by this technique. The junctions fabricated by this technique exhibit suppressed leakage current and raised on/off ratio.