In this paper, a novel δ-doped partially insulated junctionless transistor (δ-Pi-OXJLT) has been proposed. Employing highly doped δ-region below the channel not only reduces the off-state leakage current and short channel effects (SCEs) but also reduces the requirements of scaling buried oxide thickness and channel thickness. Further, the comparative analysis of digital and analog circuit performance of proposed δ-Pi-OXJLT, bulk planar (BP) JLT and silicon-on-insulator (SOI) JLT has been carried out. It has been found that, the proposed δ-Pi-OXJLT shows significant reduction in I_OFF, DIBL and SS over BPJLT and SOIJLT devices. Further, I_ON and I_ON/I_OFF in the case of proposed δ-Pi-OXJLT also improves over the BPJLT device. In addition, the improvement in analog figures of merit, G_M, G_M/I_DS, G_MR_O and f_T in the case of proposed δ-Pi-OXJLT shows that the proposed δ-Pi-OXJLT is the promising device for mixed signal integrated circuits.