Simulation-based study of negative capacitance double-gate junctionless transistors with ferroelectric gate dielectric
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- 作者：Chunsheng Jiang ; Renrong Liang ; liangrr@tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Jing Wang ; Jun Xu
- 关键词：Junctionless transistor ; Ferroelectric gate dielectric ; Negative capacitance ; Power dissipation applications ; Numerical simulation
- 刊名：Solid State Electronics
- 出版年：2016
- 出版时间：December 2016
- 年：2016
- 卷：126
- 期：Complete
- 页码：130-135
- 全文大小：1050 K
文摘
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A novel device called negative capacitance junctionless transistor is proposed.
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The working mechanisms of the proposed device are investigated in detail.
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Design guidelines on how to obtain non-hysteretic transfer behavior are developed.