文摘
A novel junctionless Ge n-Tunneling Field-Effect Transistors (TFET) structure is proposed. The junctionless device structure enhances Ion effective and Ion = 5.5×10−5A/μm is achieved. A comparison of Ion and Ioff with different channel doping concentration ND and LDD doping concentration NLDD is studied. To reduce the gate induced drain leakage (GIDL) current, the impact of the slope gate oxide structure is also studied. By employing the slope gate oxide structure, the below 60 mV/decade subthreshold swing S = 46.2 mV/decade is achieved.