Impact of series resistance on the operation of junctionless transistors

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• 作者：Dae-Young Jeon^a ; ^c ; ^{dyjeon@kist.re.kr} ; So Jeong Park^a ; ^c ; Mireille Mouis^a ; Sylvain Barraud^b ; Gyu-Tae Kim^c ; ^{gtkim@korea.ac.kr} ; Gé ; rard Ghibaudo^a ; ^{ghibaudo@minatec.inpg.fr}
• 关键词：Junctionless transistors (JLTs) ; Bulk neutral conduction ; Series resistance (Rsd) ; Analytical modeling ; De-embedded Rsd effects
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：103-107
• 全文大小：1782 K
• 卷排序：129

文摘

Series resistance (Rsd) causes significant degradation of gm in junctionless transistors (JLTs). Rsd in short channels also strongly affects the onset of second peak in dgm/dVg of JLTs. The Rsd effects are successfully de-embedded by using a simple equation. Rsd de-embedding procedure can suggest a new method to extract better Vth and Vfb in JLTs. An analytical modeling study confirms those results.