刊名:Physica E: Low-dimensional Systems and Nanostructures
出版年:2017
出版时间:March 2017
年:2017
卷:87
期:Complete
页码:150-154
全文大小:679 K
卷排序:87
文摘
A novel method is reported to improve the mobilities in 2D MoS2 transistors. The synergy process with UV and ozone plasma treatment is developed for 2D nanoelectronics. An energy band model based on Schottky barrier modulation is proposed to understand the underlying mechanism.