Analysis of low temperature output parameters for investigation of silicon heterojunction solar cells
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- 作者：Miroslav Mikolá ; &scaron ; ek ; miroslav.mikolasek@stuba.sk ; Juraj Racko ; Ladislav Harmatha
- 关键词：Solar cell ; Amorphous silicon ; Heterojunction ; Schottky barrier ; TCO/a-Si ; H ; ASA simulation ; Low temperature ; Open circuit voltage
- 刊名：Applied Surface Science
- 出版年：2017
- 出版时间：15 February 2017
- 年：2017
- 卷：395
- 期：Complete
- 页码：166-171
- 全文大小：1544 K
- 卷排序：395
文摘
Highlights Output parameters of silicon heterojunction solar cells are analyzed by simulation. Parasitic Schottky barrier causes open circuit voltage saturation at low temperature. Defect properties of amorphous emitter affect open circuit voltage at low temperature. Low temperature measurements can identify the presence of parasitic Schottky barrier. Solar cell with p type amorphous emitter has weak performance at low temperatures.