Controlling the stress of growing GaN on 150-mm Si (111) in an AlN/GaN strained layer superlattice
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- 作者：Po-Jung Lina ; d ; Shih-Yung Huangb ; Wei-Kai Wangc ; Che-Lin Chend ; Bu-Chin Chungd ; Dong-Sing Wuua ; c ; dsw@dragon.nchu.edu.tw" class="auth_mail" title="E-mail the corresponding author
- 关键词：Stresses ; Superlattice ; Metalorganic chemical vapor deposition ; Nitrides ; Semiconducting III-V materials
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：30 January 2016
- 年：2016
- 卷：362
- 期：Complete
- 页码：434-440
- 全文大小：3167 K
文摘
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The interface of the 80-paired AlN/GaN SLS was periodical.
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Adjusting the thickness of the GaN layer in the SLS controls stress of epilayer.
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The compressive stress in the SLS exists during growth and after cool down.
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Unintended AlGaN played a critical role in reducing the mismatch in SLS.
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The AlGaN efficiently accumulated stress without causing relaxation in the SLS.