Miscut dependent surface evolution in the process of N-polar growth under N-rich condition

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• 作者：Filip Krzyżewski^a ; ^{fkrzy@ifpan.edu.pl} ; Magdalena A. Załuska-Kotur^a ; ^b ; ^{zalum@ifpan.edu.pl} ; Henryk Turski^c ; Marta Sawicka^c ; Czesław Skierbiszewski^c
• 关键词：A1. Diffusion ; A1. Growth models ; A1. Surface structure ; A3. Molecular beam epitaxy ; B1. Nitrides ; B2. Semiconducting III&ndash ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：457
• 期：Complete
• 页码：38-45
• 全文大小：3310 K
• 卷排序：457

文摘

N-polar GaN surface evolution is studied in the growth process under N-rich condition. Results of kinetic Monte Carlo simulations are compared with experiments. Influence of various growth parameters on the surface morphology is investigated. Increase of temperature or miscut leads to surface smoothening. Decrease of III/V ratio or growth rate leads to surface smoothening.