Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy

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• 作者：W. Kada^a ; ^{kada.wataru@gunma-u.ac.jp" class="auth_mail" title="E-mail the corresponding author} ; Y. Kambayashi^a ; ^b ; Y. Ando^a ; ^b ; S. Onoda^b ; H. Umezawa^c ; Y. Mokuno^c ; S. Shikata^d ; T. Makino^b ; M. Koka^b ; O. Hanaizumi^a ; T. Kamiya^b ; T. Ohshima^b
• 关键词：CVD diamond ; Deep-levels ; Alpha particle induced charge transient spectroscopy (APQTS) ; Heavy ion induced charge transient spectroscopy (HIQTS)
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2016
• 出版时间：1 April 2016
• 年：2016
• 卷：372
• 期：Complete
• 页码：151-155
• 全文大小：983 K

文摘

To investigate electrically-active deep levels in high-resistivity single-crystalline diamond, particle-induced charge transient spectroscopy (QTS) techniques were performed using 5.5 MeV alpha particles and 9 MeV carbon focused microprobes. For unintentionally-doped (UID) chemical vapor deposition (CVD) diamond, deep levels with activation energies of 0.35 eV and 0.43 eV were detected which correspond to the activation energy of boron acceptors in diamond. The results suggested that alpha particle and heavy ion induced QTS techniques are the promising candidate for in-situ investigation of deep levels in high-resistivity semiconductors.